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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：530mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：410 pC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：15.6 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：420mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0604-3
- Package / Case：3-XFDFN
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Overview
The DMN2992UFO-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) range of 8V to 24V and is housed in an X2-DFN0604-3 surface-mount package. The device is designed for low-voltage switching applications, offering a compact form factor suitable for portable electronics. Key electrical characteristics include a continuous drain current of 530mA at ambient temperature and a power dissipation rating of 420mW at ambient temperature.
Feature Summary
- Utilizes an N-channel enhancement mode architecture for efficient switching control.
- Housed in the compact X2-DFN0604-3 surface-mount package for space-constrained designs.
- Rated for low-voltage operations with a BVDSS range between 8V and 24V.
Applications
- Portable consumer electronics requiring low-voltage power management
- Battery-powered devices utilizing N-channel switching
- General-purpose low-voltage signal or power switching circuits
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to ensure correct pinout and thermal specifications. Confirm RoHS compliance status through the manufacturer's product data sheet prior to integration. Cross-reference the component marking code with the datasheet to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a small footprint X2-DFN package is required for low-voltage N-channel switching. Ensure the application current does not exceed the 530mA continuous drain limit at the operating ambient temperature. Verify that the gate-source voltage requirements align with the logic levels of the driving circuitry.
Part Context
This part belongs to the DMN2992 series of low-voltage MOSFETs from Diodes Incorporated. The series provides various package options including SOT323 and X2-DFN formats to accommodate different PCB layout constraints while maintaining consistent electrical performance profiles for low-power switching tasks.
Replacement Considerations
The DMN2992UW-7 is a verified alternative within the same series, offering identical electrical characteristics but packaged in an SOT323 format instead of the X2-DFN0604-3. Designers must adjust the PCB footprint accordingly when substituting this part.
