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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：655 pF @ 8 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN29M9UFDF-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) surface-mount package. It features a drain-source breakdown voltage of 20V and a maximum continuous drain current of 11A at +25°C. The device offers low on-state resistance, specified as 13.5mΩ max at VGS=4.5V and 15.5mΩ max at VGS=2.5V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed with a 0.6mm profile for low-profile applications
- Features ESD protected gate structure
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free green device
Applications
- General purpose interfacing switch
- Power management functions
- Load switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm reel size and quantity per reel. Confirm that the component meets all applicable automotive qualification standards if required for the target application. Ensure compliance with local environmental directives regarding halogen and antimony content before final procurement decisions.
Selection Notes
Select this component when a compact footprint with a 4mm² PCB area is required. Consider its low gate threshold voltage for efficient drive requirements. Evaluate thermal performance based on the specific copper plate layout and ambient conditions. Verify that the 20V rating aligns with the system's maximum operating voltages.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power management applications requiring small form factors.
Replacement Considerations
Consult official manufacturer documentation for confirmed equivalent part numbers. Do not substitute without verifying pinout compatibility, electrical ratings, and package dimensions.
