DMN3007LSS-13

Description：MOSFET N-CH 30V 16A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9c38d4243d0c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN3007LSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 30V 16A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN3007LSS-13

Description：MOSFET N-CH 30V 16A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2714 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMN3007LSS-13

DMN3007LSS-13

Single FETs, MOSFETs Overview

The DMN3007LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 16A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 7mΩ at VGS=10V and 10mΩ at VGS=4.5V. Total gate charge reaches 64.2nC at VGS=10V. Power dissipation is rated at 2.5W with a thermal resistance of 50°C/W. Operating junction temperature ranges from -55°C to +150°C. The component utilizes an SO-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Features low gate threshold voltage, low input capacitance, fast switching speed, and low leakage.

Single FETs, MOSFETs Applications

Backlighting
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the SO-8 case material meets UL flammability classification rating 94V-0 requirements. Ensure moisture sensitivity level 1 per J-STD-020 aligns with assembly process capabilities. Validate terminal finish specifications for solderability compliance.

Single FETs, MOSFETs Selection Notes

Select this component when a single N-channel MOSFET with 30V breakdown voltage and low on-resistance is required. Consider the 16A steady-state drain current capability at +25°C ambient conditions. Evaluate the 50°C/W thermal resistance for heat dissipation needs. Verify compatibility with SO-8 footprint constraints and surface-mount assembly processes.

Single FETs, MOSFETs Part Context

This part belongs to the DMN3007LSS series of single N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to balance low on-state resistance with fast switching characteristics. The product line targets high-efficiency power management solutions requiring robust performance in compact surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as drain-source voltage, on-resistance, and package dimensions before implementation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the DMN3007LSS-13?

The maximum pulsed drain current (IDM) is 64A, subject to a pulse width of 10μS or less and a duty cycle of 1% or less.

How does the on-resistance vary with temperature?

The typical on-resistance increases as the ambient temperature rises from -55°C to +150°C, as illustrated in the typical on-resistance versus temperature graphs provided in the datasheet.