DMN3007LSSQ-13

$0.91

Description：MOSFET N-CHANNEL 30V 16A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3602fd966bf8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 30V 16A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2714 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3007LSSQ-13

Overview

The DMN3007LSSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 16A at +25°C, decreasing to 13A at +70°C. The device offers a low on-state resistance of 7mΩ at VGS=10V and 10mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount case, it supports a total power dissipation of 2.5W and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Maintains superior switching performance alongside low input capacitance.
Qualified to AEC-Q101 standards for automotive reliability.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification if used in automotive contexts. Ensure the SO-8 package dimensions align with the PCB footprint layout specifications provided in the datasheet appendix.

Selection Notes

Select this component for circuits requiring a 30V N-channel switch with high current handling capabilities up to 16A. Consider the thermal resistance of 50°C/W when designing heat dissipation strategies. Evaluate the gate threshold voltage range of 1.3V to 2.1V to ensure compatibility with the intended logic drive levels.

Part Context

This part belongs to the DMN3007LS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 plastic case. The product line is engineered to balance low conduction losses with fast switching speeds for efficient power conversion.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to match electrical ratings and package dimensions.