DMN3008SFG-7

$0.79

Description：MOSFET N-CH 30V 17.6A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:59be3020408d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 17.6A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3690 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3008SFG-7

Overview

The DMN3008SFG-7 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 30V, a maximum continuous drain current (ID) of 62A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 4.4mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features a small, form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability and subjected to 100% unclamped inductive switch (UIS) testing in production.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm compliance with RoHS directives and environmental specifications such as halogen-free status. Ensure the selected component matches the required thermal and electrical ratings for the intended application environment.

Selection Notes

Select this component based on its low RDS(ON) characteristics and compact PowerDI3333-8 footprint. Evaluate thermal resistance values relative to the PCB copper area and ambient conditions. Consider gate charge requirements for switching speed optimization in DC-DC converter designs.

Part Context

This part belongs to the DMN3008 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-density end products requiring efficient power handling in a minimal board space. The series targets applications needing robust switching capabilities and low conduction losses.

Replacement Considerations

Consult official datasheets for cross-reference compatibility. Verify pinout alignment, voltage ratings, and thermal characteristics before substituting. Ensure any alternative component meets the same AEC-Q101 qualification if required.