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Product Detailed Parameters
- Description：MOSFET N-CH 30V PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17.6A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.4mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：86 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3690 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3008SFGQ-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 30V, a continuous drain current (ID) of up to 62A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 4.4mΩ at VGS=10V. The device features a gate threshold voltage range of 1V to 2.3V and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state power losses
- PowerDI3333-8 package provides high thermal efficiency and density
- Occupies only 33% of board area compared to SO-8 packages
- 100% Unclamped Inductive Switch (UIS) tested in production
Applications
- Automotive backlighting circuits
- DC-DC converter topologies
- General power-management functions
Procurement Notes
Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS 3 and REACH directives if restricted substances are a constraint. Ensure the design accommodates the specified moisture sensitivity level and soldering requirements per MIL-STD-208.
Selection Notes
Select this component when low on-resistance and compact footprint are critical for space-constrained designs. Verify that the 30V breakdown voltage aligns with the system's maximum operating voltage. Consider the thermal resistance characteristics and ensure adequate copper pour on the PCB to handle the specified continuous drain currents without exceeding thermal limits.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for automotive environments, meeting stringent reliability standards including PPAP capability and IATF 16949 manufacturing certification. The PowerDI3333-8 package represents a modern alternative to traditional leaded packages like SO-8.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Do not substitute based solely on generic parameter matching without confirming package compatibility and automotive qualification status.
