ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMN3011LFVWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 58 A. Its on-resistance is specified at 11 mOhms, with a gate-source threshold voltage of 2.25 V and total gate charge of 19.7 nC. The component operates within a temperature range of -55 C to +150 C and has a power dissipation rating of 2.6 W.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching applications
- PowerDI3333-8 surface-mount package design optimized for thermal performance
- High continuous drain current capability suitable for power distribution tasks
Applications
- Power distribution circuits requiring low on-resistance
- DC-DC converter output stages
- Load switching applications in automotive electronics
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against official manufacturer documentation before procurement. Confirm that the PowerDI3333-8 package dimensions match your PCB footprint requirements. Ensure that the selected component meets all necessary environmental and reliability standards for your intended application environment.
Selection Notes
Select this component when a low-profile surface-mount solution with high current handling is required. The 11 mOhm on-resistance minimizes conduction losses in power paths. Consider the 30 V breakdown voltage limit and 58 A current capacity to ensure adequate headroom for your specific circuit design parameters.
Part Context
This part belongs to the Diodes Incorporated discrete MOSFET portfolio, specifically designed for power management applications. The PowerDI series offers compact footprints with enhanced thermal characteristics compared to traditional packages. This specific model targets markets requiring reliable switching performance in space-constrained designs.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.
