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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1130 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.58W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN3011LSSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and supports a continuous drain current of 9A. The device exhibits a low on-resistance of 18 milliohms at a gate-source voltage of 10V, with a maximum gate-source voltage rating of ±25V. It operates within a temperature range of -55°C to +150°C and is housed in an SOIC-8 surface-mount package.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching control
- Low on-resistance design optimized for power management applications
- High thermal stability supporting operation up to 150°C junction temperature
- Automotive qualification compliant with AEC-Q101 standards
Applications
- DC-DC converter circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific suffix Q-13 against official Diodes Incorporated documentation to confirm AEC-Q101 automotive qualification status. Ensure the SOIC-8 package variant matches the required PCB footprint. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a 30V rated N-channel MOSFET with high current handling capabilities. The low on-resistance minimizes conduction losses in power paths. Confirm that the gate drive voltage aligns with the specified threshold characteristics for optimal performance in the target application environment.
Part Context
This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing robust switching solutions in compact surface-mount packages. The DMN3011LSSQ-13 specifically targets applications needing reliable performance under automotive-grade environmental conditions while maintaining small board space requirements.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Do not assume functional compatibility based solely on matching voltage or current ratings without verifying pinout and thermal characteristics.
