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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 15V, 1480pF @ 15V
- Power - Max：2.2W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3012LEG-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±10V. The device integrates two channels with distinct on-resistance specifications: Q1 has a maximum RDS(ON) of 12mΩ at VGS=5V and ID=15A, while Q2 achieves a lower maximum of 6mΩ under identical conditions. Continuous drain current reaches 20A at TC=+25°C. Thermal performance includes a junction-to-case resistance (RθJC) of 9.5°C/W and a total power dissipation of 2.2W at TC=+25°C. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual synchronous configuration optimized for high-efficiency power management applications
- Low input capacitance and fast switching speed characteristics
- Manufactured using lead-free, halogen-free, and antimony-free materials
Applications
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging format as defined in the official datasheet. Confirm that the component meets RoHS directives and environmental requirements for your target market. Ensure supply chain sources are authorized distributors to guarantee product authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring a compact dual N-channel solution within a 30V rating envelope. The asymmetric RDS(ON) values allow for tailored optimization of different legs within a synchronous buck converter or similar topology. Evaluate thermal constraints carefully, as the low-profile PowerDI3333-8 package relies heavily on PCB copper area for effective heat dissipation during continuous operation.
Part Context
This part belongs to the DMN3012LEG series manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount case type, which provides a compact footprint suitable for space-constrained designs. The device represents a generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
The datasheet lists DMN3012LEG-7 as an alternative packaging option for the same electrical device, utilizing a 1000-unit tape and reel instead of the 3000-unit variant.
