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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 20A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.1nC @ 4.5V, 12.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：850pF @ 15V, 1480pF @ 15V
- Power - Max：2.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3012LFG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type D) surface-mount package. It features a drain-source voltage rating of 30V and a gate-source voltage limit of ±10V. The device integrates two channels with distinct on-resistance specifications: Q1 has a maximum RDS(ON) of 12mΩ at VGS=5V and ID=15A, while Q2 achieves a lower maximum of 6mΩ under identical conditions. Continuous drain current reaches 20A at TC=+25°C. Thermal performance includes a junction-to-case resistance of 9.5°C/W and a total power dissipation of 2.2W at 25°C case temperature.
Feature Summary
- Dual-channel configuration designed for high-efficiency synchronous rectification applications
- Optimized low on-state resistance to minimize conduction losses
- Fast switching speed supported by low input capacitance and gate charge
- Manufactured using lead-free, halogen-free, and antimony-free green materials
Applications
- DC-DC converters
- Power management functions
- High efficiency power management circuits
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS38967 Rev. 6-3 to confirm authenticity. Ensure the marking code matches the specified format. Note that this specific part number is marked as not recommended for new design; sourcing should prioritize availability and verify compliance with RoHS and REACH directives before integration into production systems.
Selection Notes
Select this component when a compact dual-N-channel solution is required for 30V synchronous rectification. Compare Q1 and Q2 characteristics based on specific circuit requirements, noting Q2 offers significantly lower on-resistance. Evaluate thermal constraints carefully, as the small PowerDI3333-8 package limits total power dissipation to 2.2W at 25°C case temperature without adequate heatsinking or PCB copper area.
Part Context
This device belongs to the DMN3012LFG series of 30V synchronous N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 (Type D) package, which provides a compact footprint suitable for space-constrained designs. The product line emphasizes minimizing on-state resistance while maintaining superior switching performance for modern power management topologies.
Replacement Considerations
Diodes Incorporated explicitly recommends using the DMN3012LDG as the replacement for this model. Verify pinout compatibility and electrical parameter alignment between the LFG and LDG variants before substituting in existing designs.
