DMN3013LDG-7

$0.30

Description：MOSFET 2N-CH 30V 9.5A PWRDI3333
Series：-

SKU:9fead622928b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 9.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs：14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
Power - Max：2.16W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：PowerDI3333-8 (Type D)
Grade：-
Qualification：-

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DMN3013LDG-7

Overview

The DMN3013LDG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type D) surface-mount package with a drain-source voltage rating of 30V and a maximum continuous drain current of 15A at 25°C case temperature. The device exhibits a low static drain-source on-resistance of 14.3mΩ at VGS=8V and ID=4A, alongside a total gate charge of 5.7nC at VGS=4.5V. Thermal characteristics include a junction-to-ambient thermal resistance of 58.8°C/W and an operating temperature range from -55°C to +150°C.

Feature Summary

Dual N-channel configuration designed for high-efficiency synchronous power management applications
Low input capacitance and fast switching speed to minimize dynamic losses
100% unclamped inductive switch (UIS) tested in production for enhanced ruggedness

Applications

DC-DC Converters
Power Management Functions
Analog Switches

Procurement Notes

Verify the specific ordering suffix when purchasing components. The DMN3013LDG-7 variant utilizes a 1,000-unit tape and reel packaging format. Confirm that the received parts match the exact part number and package type specified in the design requirements to ensure proper integration and performance.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution within a 3mm x 3mm footprint. The low on-resistance supports efficient power handling in synchronous rectification topologies. Ensure the gate drive voltage meets the minimum threshold requirements for optimal conduction characteristics during operation.

Part Context

This device belongs to the DMN series of synchronous MOSFETs produced by Diodes Incorporated. It is housed in the PowerDI3333-8 (Type D) package, which provides improved thermal dissipation compared to traditional small-outline packages while maintaining a minimal board space requirement for modern electronic assemblies.

Replacement Considerations

Consult official manufacturer documentation to identify verified substitute part numbers. Do not assume functional equivalence based solely on similar electrical ratings or package dimensions without confirming pinout compatibility and thermal specifications.