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Product Detailed Parameters
- Description：MOSFET 2N-CH 9.2A 8VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta)
- Rds On (Max) @ Id, Vgs：20mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1415pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：V-DFN3030-8 (Type J)
- Grade：-
- Qualification：-
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Overview
The DMN3016LDN-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN3030-8 package and operates with a drain-source voltage of 30V. The device provides a maximum on-resistance of 20mΩ at VGS=10V and 24mΩ at VGS=4.5V, supporting continuous drain currents up to 7.3A at 25°C. Key electrical parameters include a gate threshold voltage ranging from 1.4V to 2.0V, total gate charge of 25.1nC at VGS=10V, and input capacitance of 1415pF. Thermal characteristics specify a junction-to-ambient resistance of 119°C/W on FR-4 PCBs.
Feature Summary
- Dual N-channel configuration in a compact V-DFN3030-8 package
- Optimized for low on-state resistance and superior switching performance
- Totally lead-free and fully RoHS compliant construction
Applications
- DC motor control systems
- DC-AC inverters
- High efficiency power management applications
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and reel specifications. Confirm that the component meets current environmental compliance standards required for the target assembly process. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a dual N-channel topology is required within a small form factor. Evaluate thermal dissipation requirements based on the specified junction-to-ambient resistance values. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMN3016 series of dual N-channel enhancement mode MOSFETs. It utilizes a V-DFN3030-8 case design to minimize board area while maintaining thermal efficiency. The series is engineered for high-density end products requiring efficient power management solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference lists or datasheets for verified alternatives.
