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Product Detailed Parameters
- Description：MOSFET 2N-CH 21A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Rds On (Max) @ Id, Vgs：12mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1184pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8
- Grade：-
- Qualification：-
Download product information
Overview
The DMN3016LDV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type UXC) surface-mount package. The device provides a drain-source voltage rating of 30 V and a continuous drain current of 21 A at +25°C case temperature. Maximum on-resistance is specified as 12 mΩ at VGS = 10V and 17 mΩ at VGS = 4.5V, both measured at ID = 7A. Total gate charge is 21 nC at VGS = 10V. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single compact package.
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
- Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction.
Applications
- Power Management Functions
- Analog Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and moisture sensitivity levels before integration into production assemblies.
Selection Notes
Select this component when a dual N-channel configuration is required in a low-profile surface-mount footprint. Evaluate thermal resistance parameters based on the specific PCB copper area and mounting conditions to ensure junction temperatures remain within safe operating limits during operation.
Part Context
This part belongs to the DMN3016 series of dual N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 package type, which offers a small outline dimension suitable for space-constrained portable applications and high-density circuit board layouts.
Replacement Considerations
The datasheet lists the DMN3016LDV-13 as an equivalent part number differing only in tape and reel packaging quantity.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 21 A at a case temperature of +25°C and 17 A at +70°C.
What is the package type used for this component?
The component uses the PowerDI3333-8 (Type UXC) surface-mount package.
Is the device compatible with lead-free soldering processes?
Yes, the device is totally lead-free and fully RoHS compliant.
