DMN3016LFDE-7

$0.41

Description：MOSFET N-CH 30V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a293bf385f27 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 10A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMN3016LFDE-7

Overview

The DMN3016LFDE-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a low on-resistance of 12mΩ at VGS=10V, supporting a continuous drain current of 10A. The device utilizes a U-DFN2020-6 package with a 0.6mm profile. Key electrical parameters include a gate threshold voltage ranging from 1.4V to 2.0V and a total gate charge of 25.1nC at VGS=10V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Features a low gate threshold voltage suitable for logic-level driving applications.
Completely lead-free and fully RoHS compliant, also halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against official documentation to confirm packaging quantity and reel specifications. Ensure that the component meets all applicable environmental directives such as RoHS and REACH requirements before finalizing procurement. Confirm that the intended application does not involve life support systems without explicit manufacturer approval.

Selection Notes

Select this component when a compact footprint and low thermal resistance are required for high-current switching applications. The U-DFN2020-6 package provides a small PCB area of approximately 4mm². Consider the 12mΩ on-resistance at VGS=10V for optimal conduction losses in standard logic-driven circuits.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered for surface-mount assembly using the U-DFN2020-6 case type. The product line targets modern electronics requiring miniaturization and improved power efficiency in portable and industrial devices.

Replacement Considerations

Consult official datasheets for cross-reference candidates. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting.