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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.02W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3016LFDF-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30V and a maximum continuous drain current (I_D) of 10A at +25°C ambient temperature. The device offers a low on-state resistance (R_DS(ON)) of 12mΩ at V_GS = 10V and 16mΩ at V_GS = 4.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
- Features a 0.6mm profile ideal for low profile applications and a PCB footprint of 4mm².
- Totally lead-free, fully RoHS compliant, and halogen and antimony free.
- Qualified to JEDEC standards for high reliability.
Applications
- Battery Management Applications
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2, RoHS 3, and the halogen/antimony-free 'Green' device definitions provided by Diodes Incorporated.
Selection Notes
Select this component when a compact surface-mount solution is required for 30V DC-DC conversion or battery management systems. The U-DFN2020-6 package provides a small footprint suitable for space-constrained designs. Ensure the gate drive voltage supports the specified R_DS(ON) thresholds at either 4.5V or 10V for optimal conduction losses.
Part Context
This part belongs to the DMN3016 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with fast switching capabilities. The product is classified under new product advance information and is intended for general-purpose power management tasks where size and efficiency are critical design parameters.
Replacement Considerations
Refer to the manufacturer's datasheet for equivalent parts such as DMN3016LFDE-13. Verify pinout compatibility and electrical characteristics before substitution. Automotive grade alternatives with Q-suffixes are available if AEC-Q100 qualification is required.
FAQ
What is the thermal resistance junction-to-ambient for this device?
The steady-state thermal resistance junction-to-ambient (RθJA) is 174 °C/W when mounted on an FR-4 substrate with minimum recommended pad layout.
Is this component suitable for automotive applications?
This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, refer to the related automotive grade parts with the Q-suffix.
