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Product Detailed Parameters
- Description：MOSFET N-CH 30V 12A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.02W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMN3016LFDF-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a low on-resistance (R_DS(ON)) of 12 mΩ at V_GS = 10 V, or 16 mΩ at V_GS = 4.5 V. The device supports a continuous drain current (I_D) of 10 A at +25°C and 8 A at +70°C. It operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 surface-mount package.
Feature Summary
- Low gate threshold voltage for efficient drive requirements
- Minimized on-state resistance combined with superior switching performance
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free "Green" device design
Applications
- Battery management systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantities and reel specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and REACH directives, prior to integration into final assemblies.
Selection Notes
Select this component for applications requiring high efficiency in power management due to its low R_DS(ON). Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low resistance values. Consider the thermal characteristics and PCB footprint when designing for high-current scenarios.
Part Context
This part belongs to the DMN3016LFDF series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications where low profile and small PCB footprint are critical constraints.
Replacement Considerations
Check for automotive-grade equivalents if AEC-Q100/101 qualification is required. Verify pinout compatibility and electrical parameters against alternative single N-channel MOSFETs in the U-DFN2020-6 package.
