DMN3016LFDFQ-13

$0.10

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:93a2539c2c97 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：730mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3016LFDFQ-13

Overview

The DMN3016LFDFQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 30V and a low on-resistance (RDS(ON)) of 12mΩ at VGS=10V, supporting a continuous drain current (ID) of 10A at TA=25°C. The device operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 (Type F) package with a 0.6mm profile.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Low gate threshold voltage for efficient switching control
Totally lead-free and fully RoHS compliant construction

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 manufacturing facility standards for automotive change control. Ensure compatibility with the specified U-DFN2020-6 footprint during procurement planning.

Selection Notes

Select this component when a compact 0.6mm profile is required for space-constrained designs. The low RDS(ON) minimizes conduction losses in power paths. Verify that the 30V breakdown voltage aligns with the system's maximum operating voltage requirements.

Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes the U-DFN2020-6 case style, which provides a small PCB footprint of 4mm². The device is manufactured in facilities certified under IATF 16949 standards.