DMN3016LK3-13

$0.62

Description：MOSFET N-CH 30V 12.4A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2d25174c403e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 12.4A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1415 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN3016LK3-13

Overview

The DMN3016LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 37.8A at TC = +25°C. The device exhibits a low static drain-source on-resistance of 12mΩ at VGS = 10V and 16mΩ at VGS = 4.5V. Total gate charge is specified at 25.1nC. Thermal characteristics include a junction-to-case thermal resistance of 3.1°C/W and an operating temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Verified with 100% Unclamped Inductive Switch (UIS) testing during production.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS37206 Rev. 4-2 to confirm authenticity and specifications. Ensure the TO252 package matches the required footprint and that the marking code corresponds to the correct date code. Confirm compliance requirements such as RoHS and halogen-free status align with project standards before finalizing procurement.

Selection Notes

Select this component for circuits requiring a 30V N-channel MOSFET with low on-resistance and fast switching capabilities. Consider the 37.8A continuous drain current rating at case temperature and the 12mΩ on-resistance at 10V gate drive when evaluating conduction losses. Verify that the thermal resistance and power dissipation limits suit the intended heat sinking or PCB layout conditions.

Part Context

This part belongs to the DMN3016 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the PowerDI trademarked packaging technology in a TO252 form factor. The series is engineered for general-purpose power switching applications where low on-resistance and efficient thermal performance are critical design parameters.

Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMN3016 series for pin-compatible alternatives. Verify that any substitute maintains the same 30V breakdown voltage, TO252 package dimensions, and electrical characteristics to ensure circuit compatibility without redesign.