DMN3018SFG-7

$0.49

Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:745f0c656504 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3018SFG-7

Overview

The DMN3018SFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a gate-source voltage rating of ±25V. The device offers a static drain-source on-resistance of 21mΩ at VGS=10V and 35mΩ at VGS=4.5V. Continuous drain current reaches 30A at TC=+25°C and 11.3A for short pulses at TA=+25°C. Total power dissipation is rated at 1.0W (steady state) or 2.2W with thermal bias. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
ESD Protected Gate

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing, as it determines the reel quantity. The DMN3018SFG-7 variant comes in a 2000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and is halogen-free if required by your manufacturing standards. Ensure the procurement channel is authorized to avoid counterfeit parts.

Selection Notes

Select this component for high-efficiency power management applications requiring low conduction losses. The PowerDI3333-8 package provides a compact footprint suitable for space-constrained designs. Consider the thermal resistance characteristics and operating temperature range when designing heat dissipation strategies for the target application environment.

Part Context

This part belongs to the DMN3018 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package, which is designed for high-density PCB layouts. The device is constructed using silicon technology and is intended for general-purpose switching applications within its specified electrical limits.