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Product Detailed Parameters
- Description：MOSFET N CH 30V 7.3A 8-SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN3018SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a gate-source voltage rating of ±25V. The device provides a continuous drain current of 7.3A at 25°C with an on-resistance of 21mΩ at VGS=10V. It operates within a temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.
Feature Summary
- Low on-state resistance for high efficiency power management
- Fast switching speed combined with low input capacitance
- ESD protected gate structure
- Qualified to AEC-Q101 standards for high reliability
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official datasheet DS35501 Rev. 5 to confirm electrical parameters, specifically the 30V breakdown voltage and 21mΩ on-resistance. Ensure the SO-8 package dimensions match the required PCB footprint layout. Confirm RoHS compliance and absence of intentionally added lead or halogens as specified in the manufacturer's documentation.
Selection Notes
Select this component for applications requiring efficient power switching within a 30V system. The low on-resistance minimizes conduction losses, while fast switching characteristics support high-frequency operation. Consider the thermal resistance values when designing heat dissipation strategies for steady-state and transient conditions.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is housed in a standard SO-8 case made of molded plastic with matte tin terminals annealed over a copper leadframe.
Replacement Considerations
Consult the official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pin configurations and specific electrical thresholds.
