DMN3022LFG-7

Overview

The DMN3022LFG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type D) surface-mount package. It features two independent channels with distinct on-resistance specifications: Q1 has a maximum RDS(ON) of 22 mΩ at VGS=5V and ID=10A, while Q2 offers a lower maximum RDS(ON) of 8 mΩ under identical conditions. Both channels support a drain-source voltage (BVDSS) of 30V. The device operates within a junction temperature range of -55°C to +150°C and includes an internal body diode.

Feature Summary

• Dual-channel configuration providing independent switching capabilities within a single compact footprint.
• Optimized for high-efficiency power management through minimized on-state resistance and superior switching performance.
• Manufactured using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

• DC-DC Converters
• Power Management Functions
• Analog Switch

Procurement Notes

Verify the specific ordering suffix when sourcing components. The suffix '-7' indicates packaging in reels of 1000 units, whereas the suffix '-13' denotes reels containing 3000 units. Confirm that the required quantity aligns with these standard factory packaging configurations to ensure accurate procurement and inventory planning.

Selection Notes

Select this component for applications requiring a 30V rating with asymmetric current handling needs between two channels. Choose Q1 for general switching tasks where a 22 mΩ resistance is acceptable, or utilize Q2 for paths demanding lower conduction losses at 8 mΩ. Ensure the gate drive voltage supports the specified 5V threshold for optimal RDS(ON) performance.

Part Context

This part belongs to the DMN3022 series of synchronous N-channel enhancement mode MOSFETs. It utilizes the PowerDI3333-8 (Type D) case style, designed to minimize thermal resistance and physical size compared to traditional packages. The series focuses on balancing low on-resistance with fast switching speeds for modern power electronics.

Replacement Considerations

Direct replacements must match the 30V BVDSS, dual N-channel topology, and PowerDI3333-8 (Type D) footprint. Verify that substitute devices meet or exceed the RDS(ON) limits of 22 mΩ for Q1 and 8 mΩ for Q2, as well as the continuous drain current ratings at specified temperatures.

FAQ

What is the difference between channel Q1 and Q2?

Channel Q1 has a maximum static drain-source on-resistance (RDS(ON)) of 22 mΩ, while Channel Q2 offers a significantly lower maximum RDS(ON) of 8 mΩ under the same test conditions (VGS = 5V, ID = 10A).

Is the device suitable for unclamped inductive switching?

Yes, the datasheet confirms that 100% Unclamped Inductive Switching (UIS) testing is performed during production. The avalanche energy ratings are specified as 28 mJ for Q1 and 92 mJ for Q2 with L = 0.1mH.

What is the maximum operating junction temperature?

The maximum operating and storage junction temperature (TJ, TSTG) for the DMN3022LFG-7 is +150°C.