DMN3023L-7

$0.41

Description：MOSFET N-CH 30V 6.2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9eb12a6bb563 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6.2A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：873 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3023L-7

Overview

The DMN3023L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT-23 surface-mount package. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 6.2 A at +25°C. The device exhibits a maximum on-resistance (Rds(on)) of 25 mΩ at Vgs = 10 V and 4.0 A, or 28 mΩ at Vgs = 4.5 V and 3.5 A. Total gate charge (Qg) is 18.4 nC at Vgs = 10 V. Maximum ratings include a gate-source voltage of ±20 V, a pulsed drain current of 44 A, and a total power dissipation of 0.9 W at +25°C. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input capacitance
ESD protected gate structure

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the intended application environment.

Selection Notes

Select this component when a compact SOT-23 footprint is required for 30 V applications. The low Rds(on) characteristics support efficient load switching and DC-DC conversion. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low resistance values during operation.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN3023L variant specifically targets general-purpose power management tasks within small form-factor designs.