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Product Detailed Parameters
- Description：MOSFET N-CH 30V 7.5A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：605 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN3025LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of ±20 V. The device provides a continuous drain current (ID) of 7.5 A at +25°C ambient temperature, with a static drain-source on-resistance (RDS(on)) of 18 mΩ maximum at VGS = 10 V. Total power dissipation is rated at 2.0 W at +25°C. The component operates within a junction temperature range of -55°C to +150°C and utilizes the POWERDI3333-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- Qualified to AEC-Q101 Standards for High Reliability
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if specified for the target assembly process. Ensure the requested quantity aligns with standard factory packaging multiples to avoid cut-tape handling variations.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low on-resistance is required for space-constrained designs. The POWERDI3333-8 package offers significant board area reduction compared to traditional SO-8 packages. Consider the thermal characteristics and continuous current ratings relative to the expected operating ambient temperature and duty cycle constraints.
Part Context
This part belongs to the DMN3025 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power management applications where minimizing conduction losses is critical. The device integrates optimized silicon technology within a compact, lead-free plastic molding compound case suitable for automated surface-mount assembly processes.
Replacement Considerations
Consult official substitution guides or datasheets for verified equivalent parts. Cross-referencing requires matching voltage, current, and on-resistance specifications alongside compatible pinout configurations.
