DMN3025LFV-7

DMN3025LFV-7

$0.51
  • Description:MOSFET N-CH 30V 25A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7c61b600fd4e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 25A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI3333-8 (Type UX)
  • Package / Case:8-PowerVDFN

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DMN3025LFV-7

Overview

The DMN3025LFV-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30 V and a gate-source voltage (VGSS) rating of ±20 V. The device provides a continuous drain current (ID) of 25 A at a case temperature of +25°C, with a pulsed drain current (IDM) capability of 55 A. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 18 mΩ at VGS = 10 V and ID = 7 A, or 30 mΩ at VGS = 4.5 V and ID = 7 A. Total power dissipation (PD) is rated at 0.9 W under standard ambient conditions. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
  • Utilizes a small form factor PowerDI3333-8 package that occupies only 33% of the board area compared to SO-8 packages.
  • Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists DMN3025LFV-7 as packaged in 2,000 units per tape and reel, whereas DMN3025LFV-13 is supplied in 3,000 units per tape and reel. Confirm the required packaging quantity matches the intended manufacturing process before placing orders. Ensure compatibility with the PowerDI3333-8 footprint during procurement planning.

Selection Notes

Select this component for designs requiring low RDS(ON) to reduce conduction losses in power management circuits. The 30 V rating suits low-voltage DC-DC converter topologies. Evaluate thermal requirements against the 0.9 W dissipation limit at +25°C ambient; utilize copper planes to leverage the exposed drain pad for improved heat transfer if higher power handling is needed.

Part Context

This part belongs to the DMN3025 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in the PowerDI3333-8 (Type UX) package, which is a molded plastic case with a green molding compound and UL flammability classification rating of 94V-0. The device is designed for high-density end products due to its compact size and thermally efficient construction.

Replacement Considerations

Direct substitutes include other Diodes Incorporated parts such as DMN3025LFV-13, which shares identical electrical characteristics but differs in reel packaging quantity. Verify pinout compatibility and thermal resistance values when considering cross-brand alternatives.

FAQ

What is the maximum continuous drain current at elevated temperatures?

The continuous drain current decreases to 20 A when the case temperature is maintained at +70°C.

Does the device support avalanche energy ratings?

Yes, the datasheet specifies an avalanche current (IAS) of 14 A and an avalanche energy (EAS) of 9.8 mJ based on a 0.1 mH inductance.

DMN3025LFV-7DMN3025LFV-7
$0.51
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