DMN3026LVTQ-7

$0.48

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3ca1b0f01165 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：643 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3026LVTQ-7

Overview

The DMN3026LVTQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum continuous drain current of 6.6A at +25°C. The device exhibits a low on-resistance of 23mΩ at VGS=10V and 30mΩ at VGS=4.5V. Packaged in a TSOT26-6 surface-mount case, it operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 1.2W at +25°C.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
Qualified to AEC-Q101 standards for high reliability and capable of PPAP requirements for automotive use.
Constructed as a totally lead-free, fully RoHS compliant device that is halogen and antimony free.

Applications

DC-DC Converters
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates packaging in a tape and reel format with a quantity of 3,000 units per reel. Confirm that the required component matches this exact package configuration and quantity specification before finalizing procurement orders to ensure compatibility with automated assembly processes.

Selection Notes

Select this component for circuits requiring low input capacitance and fast switching speeds alongside low on-resistance. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(ON) performance. Verify thermal management capabilities against the provided transient thermal resistance data to maintain safe operating area limits under varying duty cycles and ambient temperatures.

Part Context

This part belongs to the DMN3026LVT series of 30V N-channel MOSFETs from Diodes Incorporated. It utilizes the TSOT26 package, which provides a compact footprint suitable for space-constrained designs. The device is engineered to balance conduction losses with switching efficiency, targeting modern power supply architectures.

Replacement Considerations

Direct substitutes include the DMN3026LVT-7 (TSOT23-6 package) and DMN3026LVTQ-13 (TSOT26, 10,000/reel). Verify pinout compatibility and thermal characteristics when swapping between different package types or reel quantities.