DMN3028L-13

$0.12

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f9d28fe4de4b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3028L-13

Overview

The DMN3028L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 6.2A at +25°C. The device offers low on-resistance, specified as 25mΩ maximum at VGS=4.5V and ID=3.5A, or 28mΩ at VGS=10V and ID=4.0A. It operates within a temperature range of -55°C to +150°C and utilizes a SOT23 surface-mount package.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and halogen/antimony-free requirements. Ensure compatibility with standard SMD/SMT assembly processes and check for any automotive-specific variants if AEC-Q101 qualification is required.

Selection Notes

Select this component for applications requiring a compact single N-channel MOSFET with low static resistance. The 30V rating suits low-voltage systems. Evaluate thermal performance against the junction-to-ambient resistance of 146 °C/W on FR-4 substrates. Consider the gate threshold voltage range when designing drive circuits for varying load conditions.

Part Context

This part belongs to the DMN3028L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions in portable and industrial electronics.

Replacement Considerations

For automotive applications requiring specific change control and AEC-Q101 qualification, consult the separate datasheet for the DMN3028LQ variant. Verify pinout and electrical characteristics match before substituting other generic 30V N-channel MOSFETs.