DMN3032LE-13

$0.63

Description：MOSFET N-CH 30V 5.6A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c3b1fb9fa8c3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.6A SOT223
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：498 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

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DMN3032LE-13

Overview

The DMN3032LE-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 5.6A at 25°C ambient temperature, increasing to 15.4A at 25°C case temperature. Static drain-source on-resistance (RDS(on)) is specified as a maximum of 29mΩ at VGS = 10V and 35mΩ at VGS = 4.5V. Total power dissipation reaches 1.8W at 25°C ambient or 14W at 25°C case. The component utilizes a SOT-223 surface-mount package.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance
Maintains superior switching performance alongside low input capacitance
Qualified to AEC-Q101 standards ensuring high reliability in automotive environments
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

DC Motor Control
DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2 and the defined Halogen- and Antimony-free 'Green' criteria. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(on) is required for efficient power switching. Consider the thermal characteristics, noting the significant difference between ambient and case temperature ratings for power dissipation calculations. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction and switching speeds.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching capabilities. The device is housed in a SOT-223 case made of molded plastic with matte tin terminals, suitable for surface mount technology applications requiring robust thermal and electrical performance.