DMN3033LSNQ-13

$0.14

Description：MOSFET N-CH 30V 6A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3d230dd87e0d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6A SC59
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：755 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SC-59-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3033LSNQ-13

Overview

The DMN3033LSNQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 6A at +25°C. The device offers a maximum static drain-source on-resistance (RDS(on)) of 30mΩ at VGS = 10V and 40mΩ at VGS = 4.5V. Total gate charge (Qg) is 10.5nC. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 1.4W.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching capability
Qualified to AEC-Q101 standards for automotive reliability
Totally lead-free and fully RoHS compliant

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the SC-59 package dimensions align with the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020 during storage and handling procedures.

Selection Notes

Select this component when a single N-channel MOSFET with low RDS(on) and fast switching is required in an SC-59 package. Consider its 30V rating and 6A continuous current capacity for compact power management designs. Verify thermal resistance characteristics against the specific ambient operating conditions of the application.

Part Context

This part belongs to the DMN3033 series of small-signal enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SC-59 case. The product is designed for high-reliability applications, meeting automotive qualification standards while maintaining standard electrical performance profiles.