DMN3035LWN-7

Overview

The DMN3035LWN-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a V-DFN3020-8 (Type N) package. It features a drain-source voltage of 30V and a maximum continuous drain current of 5.5A at +25°C. The device exhibits low on-state resistance, rated at 35mΩ max at VGS=10V and 45mΩ max at VGS=4.5V. Key electrical parameters include a gate-source voltage limit of ±20V, total gate charge of 9.9nC at VGS=10V, and input capacitance of 399pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package for space-constrained designs.
• Optimized for high-efficiency power management through minimized on-state resistance while maintaining fast switching performance.
• Qualified to AEC-Q101 standards to ensure reliability in demanding automotive and industrial environments.
• Compliant with RoHS directives and manufactured as a halogen-free green device.

Applications

• DC motor control circuits
• DC-AC inverters

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '-7' indicates packaging in reels of 3,000 units within the V-DFN3020-8 case. Confirm that the required quantity aligns with this standard reel size or select the appropriate alternative suffix if a different tape and reel quantity is needed for the production run.

Selection Notes

Select this component for applications requiring a dual N-channel topology in a small footprint. Ensure the design accounts for the thermal resistance characteristics, specifically the junction-to-ambient rating on FR-4 substrates. Verify that the gate drive voltage meets the requirements for the desired on-resistance level, as RDS(ON) varies significantly between 4.5V and 10V gate drives.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs produced by Diodes Incorporated. It utilizes the V-DFN3020-8 (Type N) package, which provides enhanced thermal dissipation compared to traditional plastic packages. The device is designed to replace discrete dual MOSFET solutions, reducing board space and parasitic inductance in power stages.

Replacement Considerations

Direct replacements must match the 30V rating, dual N-channel configuration, and V-DFN3020-8 package dimensions. Verify pinout compatibility and ensure the substitute device meets or exceeds the 35mΩ on-resistance specification at the intended operating gate voltage.

FAQ

What is the maximum continuous drain current for the DMN3035LWN-7?

The maximum continuous drain current is 5.5A at an ambient temperature of +25°C and decreases to 4.4A at +70°C.

Does the DMN3035LWN-7 support avalanche energy ratings?

Yes, the datasheet specifies Avalanche Current (IAS) and Avalanche Energy (EAS) ratings based on low frequency and duty cycles to maintain a junction temperature of +25°C.

What is the reverse recovery time of the internal body diode?

The typical reverse recovery time (tRR) is 7.9ns when tested with a forward current of 4.8A and a di/dt of 100A/μs.