DMN3051L-7

$0.48

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:06c25c59c22c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：38mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：424 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3051L-7

Overview

The DMN3051L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 surface-mount package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 4.5A at +25°C, rising to 5.8A under short-duration conditions. The device exhibits a maximum on-resistance (RDS(ON)) of 38mΩ at VGS=10V and 64mΩ at VGS=4.5V. Operating temperature ranges from -55°C to +150°C junction temperature.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Low gate threshold voltage for easy drive compatibility
Totally lead-free and fully RoHS compliant construction

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as defined by the manufacturer's green product guidelines before finalizing procurement specifications.

Selection Notes

Select this component when a compact SOT23 footprint is required for 30V applications. Ensure the design accommodates the thermal constraints, noting the steady-state power dissipation limits. Verify that the gate drive voltage aligns with the specified RDS(ON) performance curves to achieve optimal conduction losses during operation.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in general-purpose power management circuits requiring small form factors.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent part numbers. Do not substitute based solely on generic parameter matching without confirming pinout and thermal characteristics.