DMN3051LDM-7

$0.48

Description：MOSFET N-CH 30V 4A SOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dc9104e9d384 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 4A SOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：38mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：424 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-26
Package / Case：SOT-23-6

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DMN3051LDM-7

Overview

The DMN3051LDM-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT-26 package and operates with a drain-source voltage of 30 V and a continuous drain current of 4.0 A. The device exhibits low on-resistance, measuring 38 mΩ at VGS = 10V and 64 mΩ at VGS = 4.5V. Key electrical parameters include a gate-source voltage rating of ±20 V, a total power dissipation of 900 mW, and a thermal resistance junction-to-ambient of 139 °C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low on-resistance for efficient power switching
Fast switching speed enabled by low input capacitance
Qualified to AEC-Q101 standards for high reliability

Applications

Power management circuits
Load switching applications
DC-DC converter designs

Procurement Notes

Verify the component authenticity against the official Diodes Incorporated datasheet DS31523 Rev. 3-2. Confirm that the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging in the SOT-26 case. Ensure compliance with RoHS directives and check for any specific moisture sensitivity level requirements during storage and handling procedures.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The SOT-26 package provides a balance between current handling capability and board area efficiency. Consider the 30V breakdown voltage and 4A continuous current limits to ensure adequate headroom for the intended load conditions.

Part Context

This part belongs to the DMN3051 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is designed for general-purpose switching applications requiring low conduction losses. The DMN3051LDM-7 variant specifically utilizes the SOT-26 package configuration for surface mount assembly.