DMN3052L-7

$0.37

Description：MOSFET N-CH 30V 5.4A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:facd7c4ecb0f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.4A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2V, 10V
Rds On (Max) @ Id, Vgs：32mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：555 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3052L-7

Overview

The DMN3052L-7 is a single N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device supports a drain-source voltage of 30V and a continuous drain current of 5.4A at 25°C, with a pulsed current rating of 19A. Total power dissipation reaches 1.4W, and the junction temperature range spans from -55°C to +150°C. Static on-resistance is specified as low as 26mΩ at VGS=10V and ID=5.8A. The component meets AEC-Q101 standards for high reliability.

Feature Summary

Low static drain-source on-resistance across multiple gate drive voltages
Fast switching speed supported by low input capacitance and total gate charge
Qualified to AEC-Q101 automotive standards for high reliability applications
Lead-free design compliant with RoHS directives

Applications

Power management circuits requiring low on-resistance
Automotive electronic systems validated under AEC-Q101
General-purpose switching applications utilizing SOT-23 packaging

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3000-unit tape and reel configuration. Confirm that the component status remains acceptable for your project lifecycle, as the datasheet explicitly marks this part as not recommended for new designs. Ensure all electrical parameters align with your system requirements before finalizing procurement.

Selection Notes

Select this component when a single N-channel MOSFET with a 30V rating and low conduction losses is required. The SOT-23 package suits space-constrained designs. Evaluate the thermal resistance of 90°C/W against your PCB layout capabilities. Consider the AEC-Q101 qualification if operating within automotive environments. Verify compatibility with available gate drive voltages given the threshold characteristics.

Part Context

This component belongs to the DMN3052L series of N-channel enhancement mode field effect transistors produced by Diodes Incorporated. It represents a discrete semiconductor solution designed for efficient power switching. The product line emphasizes low on-resistance and fast switching performance within a compact surface-mount form factor suitable for modern electronics manufacturing.