DMN3060LCA3-7

$0.45

Description：MOSFET N-CH 30V 3.9A X4DSN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8ee339cbd948 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.9A X4DSN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
Rds On (Max) @ Id, Vgs：60mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.677 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：192 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：790mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X4-DSN1006-3
Package / Case：3-XFDFN

Download product information

DMN3060LCA3-7

Overview

The DMN3060LCA3-7 is an N-channel enhancement mode MOSFET designed for minimal footprint in handheld and mobile applications. It features a drain-source voltage of 30V, with on-resistance maximums of 60mΩ at VGS=8V and 72mΩ at VGS=4.5V. Continuous drain current reaches 3.9A at TA=+25°C (VGS=8V). The device operates within a junction temperature range of -55°C to +150°C and utilizes the X4-DSN1006-3 package.

Feature Summary

Low gate charge and low reverse transfer capacitance
Small footprint design with low profile height
Totally lead-free and fully RoHS compliant

Applications

Battery management systems
Load switches
Battery protections
Handheld and mobile applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS compliance and halogen-free requirements, as specified by the manufacturer's quality definitions. Ensure compatibility with the required moisture sensitivity level during assembly processes.

Selection Notes

Select this component when minimizing board space is critical for portable electronics. Evaluate the thermal resistance characteristics against the expected power dissipation in the target application. Consider the gate threshold voltage and drive voltage levels to ensure optimal switching performance and low on-resistance operation under the specific circuit conditions.

Part Context

This part belongs to Diodes Incorporated's generation of MOSFETs optimized for small form factors. It serves as a direct replacement for many smaller signal MOSFETs while offering improved electrical characteristics. The X4-DSN1006-3 package provides a compact solution suitable for high-density PCB layouts in consumer devices.