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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN3060LW-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a maximum continuous drain current (I_D) of 2.6 A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 60 mΩ at V_GS = 10 V and 100 mΩ at V_GS = 4.5 V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 0.5 W in the SOT323 package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Halogen and antimony free construction, classified as a "Green" device.
Applications
- General purpose interfacing switch
- Power management functions
- DC-DC converters
- Analog switch
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required automotive or industrial qualification standards if applicable, as standard versions differ from those qualified to AEC-Q100/101/200. Ensure the source channel is authorized to prevent counterfeit risks.
Selection Notes
Select this component when a compact single N-channel MOSFET is required for low-voltage switching applications. The SOT323 package suits space-constrained designs. Evaluate thermal constraints carefully due to the 0.5 W power dissipation limit in ambient conditions. Verify gate drive voltage compatibility with the specified R_DS(ON) thresholds.
Part Context
This part belongs to the DMN3060LW series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT323 case. The product line focuses on general-purpose switching and power management solutions requiring small form factors and efficient conduction characteristics.
Replacement Considerations
The datasheet lists DMN3060LW-13 as an alternative packaging option with identical electrical characteristics but a different tape and reel quantity. No other direct cross-references are provided in the official documentation.
