DMN3060LWQ-7

$0.32

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e067a5af3d7f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN3060LWQ-7

Overview

The DMN3060LWQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 2.6A at +25°C. The device offers a low on-resistance (RDS(ON)) of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in SOT323, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Low on-resistance and input capacitance for efficient switching
Fast switching speed characteristics
Manufactured in IATF16949:2016 certified facilities

Applications

General-purpose interfacing switches
Power-management functions
DC-DC converters
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards for your specific automotive application context before finalizing procurement.

Selection Notes

Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for space-constrained designs using the SOT323 package. Ensure the gate drive voltage supports the specified RDS(ON) thresholds. Verify thermal management requirements against the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements, distinguishing itself through its AEC-Q101 qualification and compliance with IATF16949:2016 manufacturing standards.