DMN3061S-13

$0.05

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e00c42414495 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：59mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：233 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3061S-13

Overview

The DMN3061S-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 2.9A at +25°C, with a pulsed drain current (IDM) capability of 24A. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 59mΩ at VGS = 10V and 98mΩ at VGS = 4.5V. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Features low input capacitance and fast switching speed characteristics.
Compliant with RoHS directives and constructed using halogen-free and antimony-free materials.

Applications

General-purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the product marking code 'AN6' matches the physical components received. Ensure compliance requirements align with project specifications regarding lead-free and green material standards.

Selection Notes

Select this component when a 30V N-channel MOSFET in an SOT23 package is required. Evaluate RDS(ON) values against load currents at specific gate drive voltages. Consider thermal resistance parameters for heat dissipation requirements in the target application environment.

Part Context

This part belongs to the DMN3061S series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT23 surface-mount package. The device is intended for general electronic circuits requiring efficient switching capabilities.

Replacement Considerations

Cross-reference with other 30V N-channel MOSFETs in SOT23 packages. Verify pinout compatibility and electrical parameter equivalence before substitution.