DMN3061S-7

$0.31

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4936d458ed7f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
Rds On (Max) @ Id, Vgs：59mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：233 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3061S-7

Overview

The DMN3061S-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 2.9A at +25°C. The maximum on-resistance (RDS(ON)) is 59mΩ at VGS=10V and 98mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) of 1.3V typical, total gate charge (Qg) of 2.9nC at VGS=4.5V, and input capacitance (Ciss) of 233pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high-efficiency power management
Fast switching speed with low input/output leakage
Totally lead-free and fully RoHS compliant

Applications

General-purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a compact SOT23 footprint with a 30V rating. Ensure the design accommodates the specified RDS(ON) values at the intended gate drive voltages (4.5V or 10V). Consider the thermal resistance characteristics when designing for steady-state currents near the 2.9A limit.

Part Context

This part belongs to the DMN3061 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a standard SOT23 surface-mount package suitable for automated assembly processes.