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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMN3066LVT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 3.6 A at +25°C. The device offers a maximum on-resistance (R_DS(ON)) of 67 mΩ at V_GS = 4.5 V, 70 mΩ at V_GS = 4.0 V, and 98 mΩ at V_GS = 2.5 V. Total gate charge (Q_g) is 4.0 nC. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power-management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen/antimony-free specifications. Ensure the TSOT26 package dimensions align with the target PCB footprint layout requirements.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low R_DS(ON) is required for compact designs. The TSOT26 package suits space-constrained applications. Evaluate thermal performance based on the specified junction-to-ambient resistance values under steady-state conditions. Consider the gate threshold voltage characteristics for compatibility with the driving logic levels in the circuit design.
Part Context
This part belongs to the DMN3066LVT series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power-management applications requiring small form factors and robust electrical characteristics.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure equivalent electrical parameters and package compatibility.
