DMN3069L-7

$0.31

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:afab82ac24fd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：309 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3069L-7

Overview

The DMN3069L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 surface-mount package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 5.3A at +25°C. The device offers low on-resistance, specified as 30mΩ maximum at VGS=10V and 40mΩ maximum at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 1.8V, total gate charge of 8.1nC at VGS=10V, and input capacitance of 309pF. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input/output leakage
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the selected variant matches the exact electrical specifications documented in the official datasheet.

Selection Notes

Select this component for applications requiring a compact SOT23 footprint with robust 30V blocking capability. Evaluate thermal performance based on the junction-to-ambient resistance values provided for different mounting conditions. Consider the gate threshold voltage characteristics when designing drive circuits for varying load currents.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product utilizes a molded plastic case material classified as UL 94V-0 flammability rating.