DMN3071LFR4-7R

$0.07

Description：MOSFET N-CH 30V 3.4A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4b7939d8e2d6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.4A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：65mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1010-3
Package / Case：3-XFDFN

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DMN3071LFR4-7R

Overview

The DMN3071LFR4-7R is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1010-3 package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.4A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 65mΩ at VGS=10V and 75mΩ at VGS=4.5V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications by minimizing on-state resistance while maintaining superior switching performance.
Features low input/output leakage characteristics and fast switching speed capabilities.
Constructed with epitaxial planar die technology for robust electrical performance.

Applications

Power-management functions
Backlighting circuits
Load switches

Procurement Notes

Verify the specific ordering suffix '-7R' corresponds to the tape and reel packaging configuration when sourcing components. Confirm that the procurement channel is authorized to ensure product authenticity and adherence to standard terms and conditions. Cross-reference the document number DS40749 Rev. 3-2 to ensure the datasheet version matches the manufacturing batch specifications.

Selection Notes

Select this component for designs requiring a compact surface-mount solution with low on-resistance at both 10V and 4.5V gate drive levels. Evaluate the thermal resistance parameters against the specific PCB copper coverage and substrate requirements to ensure safe operation within the maximum junction temperature limits under expected load conditions.

Part Context

This part belongs to the DMN3071LFR4 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes the X2-DFN1010-3 package, which provides a small footprint suitable for space-constrained portable and industrial electronics. The 'DMN' prefix indicates the N-channel MOSFET topology within the manufacturer's discrete semiconductor portfolio.

Replacement Considerations

Consult the official Diodes Incorporated documentation or contact local representatives directly to identify qualified automotive-grade substitutes or alternative packages. Verify pinout compatibility and electrical parameter equivalence before implementing any cross-references.