DMN30H4D0LFDE-7

$0.59

Description：MOSFET N-CH 300V 550MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:367a3b53e735 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 300V 550MA 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：300 V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 10V
Rds On (Max) @ Id, Vgs：4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：187.3 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：630mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMN30H4D0LFDE-7

Overview

The DMN30H4D0LFDE-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 300 V and operates within a junction temperature range of -55°C to +150°C. The device utilizes a U-DFN2020-6 package with a 0.6 mm profile. Key electrical parameters include a static drain-source on-resistance (RDS(ON)) of up to 4 Ω at VGS = 10V and 0.3A, and a continuous drain current (ID) of 0.55 A at TA = +25°C. Total gate charge (Qg) is typically 7.6 nC.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features low gate threshold voltage and low input capacitance for fast switching performance.
Qualified to AEC-Q101 standards for automotive high reliability requirements.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Power management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix '-7' indicates a standard quantity per reel of 3,000 units, while '-13' denotes 10,000 units. Confirm that the required packaging format aligns with production needs. Ensure compliance with moisture sensitivity level 1 per J-STD-020 during storage and handling procedures.

Selection Notes

Select this component when a 300 V rating is required in a compact U-DFN2020-6 footprint. Consider the RDS(ON) specifications at various gate voltages (10V, 4.5V, 2.7V) to match drive capabilities. Evaluate thermal resistance values based on the intended PCB copper area and mounting conditions to ensure adequate heat dissipation.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to balance low on-state resistance with superior switching performance. It is specifically engineered for space-constrained environments requiring a 0.6 mm profile. The product is marketed as a 'Green' device due to its compliance with environmental regulations regarding lead, halogens, and antimony.