DMN3112S-7

$0.42

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9decb9da40a8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：268 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3112S-7

Overview

The DMN3112S-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a SOT-23 package. It features a drain-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 5.8 A at +25°C. The device exhibits low on-resistance (RDS(ON)) of 47 mΩ at VGS = 10V and 92 mΩ at VGS = 4.5V. Total power dissipation is rated at 1.4 W with a thermal resistance (RθJA) of 90 °C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency switching
Fast switching speed with low input capacitance
Low gate threshold voltage for easy drive compatibility
Totally lead-free and fully RoHS compliant

Applications

Power management circuits
Load switches
DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard tape and reel packaging configuration. Confirm that the component meets the required JEDEC standards for high reliability if applicable to your design. Ensure the sourcing channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a 30 V N-channel MOSFET with moderate current handling is required in a compact SOT-23 footprint. Consider the RDS(ON) values at your specific gate drive voltage to ensure acceptable conduction losses. Evaluate the thermal performance based on your PCB layout and ambient conditions.

Part Context

This part belongs to Diodes Incorporated's DMN series of surface-mount N-channel MOSFETs. It is designed for general-purpose switching applications where space constraints are critical. The datasheet indicates it is not recommended for new designs, suggesting potential obsolescence or replacement by newer alternatives within the same family.

Replacement Considerations

The datasheet explicitly recommends using the DMN3110S as a replacement. Verify pinout compatibility and electrical specifications before substitution.

FAQ

Is the DMN3112S suitable for automotive applications?

No, this specific part is not qualified for automotive use. For automotive applications requiring specific change control, refer to the related automotive grade part with the Q-suffix (DMN3112SQ).