DMN31D5UFZQ-7B

Overview

The DMN31D5UFZQ-7B is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) rating of ±12V. The device offers low on-resistance, with RDS(ON) values ranging from 1.5Ω at VGS=4.5V to 4.5Ω at VGS=1.5V. Continuous drain current (ID) reaches 0.41A at +25°C. Total gate charge (Qg) is 0.38nC, supporting fast switching with turn-on delay times of 3.2ns. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Low package profile with a maximum height of 0.4mm and a compact footprint.
• Very low gate threshold voltage with a maximum rating of 1.0V.
• ESD protected gate structure for enhanced reliability.
• Qualified for automotive applications under AEC-Q101 standards.

Applications

• General purpose interfacing switch
• Power management functions
• Analog switch

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details, as suffixes define reel quantities and tape specifications. Ensure compliance with RoHS 3 and halogen-free requirements by checking the manufacturer's quality definitions. Confirm that the X2-DFN0606-3 package dimensions match your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when space-constrained designs require a low-profile N-channel MOSFET with a 30V rating. The low gate threshold voltage makes it suitable for logic-level control applications. Consider the thermal resistance and power dissipation limits if operating in environments approaching the maximum junction temperature. Verify that the required continuous or pulsed drain currents fall within the specified safe operation area.

Part Context

This part belongs to the DMN31D5U series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X2-DFN0606-3 case. The product is designed to minimize on-state resistance while maintaining superior switching performance, targeting efficiency improvements in modern electronic systems.

Replacement Considerations

Consult the official datasheet for equivalent parts within the same family. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) before substitution. Automotive replacements must also meet AEC-Q101 qualification and IATF 16949 manufacturing standards.

FAQ

Is the DMN31D5UFZQ-7B qualified for automotive use?

Yes, the DMN31D5UFZQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) rating is ±12V.

Does the device have ESD protection?

Yes, the datasheet specifies that the gate is ESD protected.