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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.68A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：44.8pF @ 15V
- Power - Max：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN32D0LVQ-13 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.68A at +25°C. The device offers low on-resistance, rated at 1.2Ω maximum at VGS = 4.0V with ID = 100mA, and 1.5Ω maximum at VGS = 2.5V with ID = 20mA. Total gate charge (Qg) is typically 0.62nC at VGS = 4.5V and VDS = 15V. Input capacitance (Ciss) is typically 44.8pF. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Ultra-small surface mount package suitable for space-constrained designs
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Automotive power management systems requiring specific change control
- High efficiency power conversion circuits
- Low voltage load switching applications
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the datasheet. Confirm that the procurement channel provides traceability documentation required for AEC-Q101 qualified components intended for automotive manufacturing processes.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating and low gate threshold voltage is required. Ensure the application logic levels support the 2.5V or 4.5V gate drive conditions necessary to achieve the specified low on-resistance values within the thermal constraints of the SOT563 package.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet automotive industry requirements, distinguishing it from standard commercial grade devices through its qualification to AEC-Q101 and compliance with IATF16949 manufacturing standards.
Replacement Considerations
The datasheet lists DMN32D0LVQ-7 as a variant with identical electrical characteristics but packaged in 3,000-unit reels. No other direct cross-model substitutes are documented in the official specifications.
