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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.65A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：650mA
- Rds On (Max) @ Id, Vgs：400mOhm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：290mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN32D4SDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 0.65A at 25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS=10V and 0.7Ω at VGS=4.5V. Total power dissipation is rated at 0.29W to 0.35W depending on PCB conditions. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT363 package
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format specified in the official datasheet. Confirm RoHS compliance and green material status requirements against project specifications before finalizing procurement orders.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs with low on-resistance and fast switching characteristics. Ensure the operating voltage does not exceed the 30V drain-source breakdown limit and that thermal management accommodates the specified power dissipation ratings under expected load conditions.
Part Context
This part belongs to the DMN32D4SDW series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a lead-free SOT363 case suitable for surface mount assembly.
Replacement Considerations
No official substitutes are listed in the documentation. Verify pinout compatibility and electrical parameters when considering alternative dual N-channel MOSFETs in the SOT363 package.
