DMN33D8LT-7

$0.24

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3596934b1a5e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 115MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：48 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：240mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN33D8LT-7

Overview

The DMN33D8LT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 115mA at +25°C, with a static drain-source on-resistance (RDS(ON)) of 5Ω at VGS = 4V and 7Ω at VGS = 2.5V. Total power dissipation is rated at 240mW or 300mW depending on the PCB copper area. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure rated at 2kV
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for Relays, Solenoids, Lamps, and Displays

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets JEDEC standards for high reliability if required by the design specifications. Ensure the application environment remains within the specified thermal resistance limits for the chosen PCB layout.

Selection Notes

Select this component for applications requiring a compact SOT523 surface mount package with low on-state resistance. Consider the 5Ω RDS(ON) specification when designing circuits operating at lower gate voltages such as 2.5V. Evaluate the 240mW to 300mW power dissipation capabilities against the expected thermal load and available copper area on the printed circuit board.

Part Context

This part belongs to the DMN33 series of N-channel enhancement mode MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The DMN33D8LT-7 variant specifically utilizes the SOT523 case outline and is packaged in reels of 3,000 units for automated assembly processes.