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Product Detailed Parameters
- Description：MOSFET N-CH 30V 115MA SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：48 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：240mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN33D8LTQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current of 115mA at 25°C ambient temperature, with a maximum power dissipation of 240mW on FR-4 substrate. Electrical characteristics include a gate threshold voltage ranging from 0.8V to 1.5V and a static drain-source on-resistance of 5Ω at VGS=4V. Total gate charge is typically 0.55nC at VGS=10V.
Feature Summary
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability
- Features low input capacitance and fast switching speed for efficient operation
- Includes an ESD protected gate rated at 2KV
- Housed in a small SOT523 surface mount package
Applications
- Brushless DC Motor Control
- DC-DC Converters
- Load Switch
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all required automotive quality standards, including IATF 16949 manufacturing certification and RoHS compliance, before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a compact N-channel MOSFET suitable for automotive environments. Ensure the application logic can drive the gate voltage sufficiently to achieve the specified 5Ω on-resistance. Verify that the thermal management strategy accommodates the 240mW power dissipation limit on standard FR-4 substrates.
Part Context
This part belongs to the DMN33D8LTQ series of N-channel enhancement mode MOSFETs designed specifically for automotive use. It is manufactured in IATF 16949 certified facilities and supports strict change control requirements. The series is characterized by its small footprint and robust electrical performance in low-voltage switching applications.
Replacement Considerations
The DMN33D8LTQ-7 is a verified substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel format instead of the 10,000-unit configuration.
