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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN33D9LV-13A is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The maximum on-resistance (RDS(ON)) is specified as 3Ω at VGS = 4.5V and 7Ω at VGS = 2.5V, with a gate threshold voltage (VGS(TH)) ranging from 0.8V to 1.4V. Total gate charge (Qg) is 1.23nC at VGS = 10V. The device supports an operating temperature range of -55°C to +150°C and includes ESD protection for the gate terminal.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low on-state resistance combined with fast switching speed capabilities
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13A' corresponds to the 10,000-unit reel quantity and Pin 1 indicator marking when sourcing. Confirm that the component meets environmental compliance requirements such as RoHS 3 and Halogen-free standards. Ensure the supplier provides valid traceability documentation for the manufacturing date code and lot number to maintain quality assurance protocols during assembly.
Selection Notes
Select this component for low-voltage switching applications requiring dual channels within a compact SOT563 footprint. Evaluate the RDS(ON) specifications against the required gate drive voltage levels, noting the significant resistance increase at lower VGS values. Consider the thermal resistance characteristics and power dissipation limits relative to the expected ambient operating conditions and duty cycle requirements.
Part Context
This part belongs to the DMN33 series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with variants like the DMN33D9LV-7, differing primarily in packaging quantity and marking details. The '13A' suffix indicates a 13-inch tape and reel format containing 10,000 units with a specific pin 1 indicator marking.
Replacement Considerations
Direct substitutes include other DMN33D9LV variants such as DMN33D9LV-7 or DMN33D9LV-13, which share identical electrical parameters but differ in reel size and marking. Verify pinout compatibility and package dimensions when considering alternative manufacturers' dual N-channel MOSFETs in the SOT563 form factor.
