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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN3401LDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 0.8 A at +25°C. The device offers low on-resistance, specified as a maximum of 0.4 Ω at V_GS = 10 V and 0.7 Ω at V_GS = 4.5 V. It operates within a temperature range of -55°C to +150°C and utilizes an SOT-363 package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-resistance optimized for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor control systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official datasheet DS41496 Rev. 5 to confirm authenticity. Ensure the marking code matches the product type and date code format specified in the manufacturer's documentation. Check for compliance with RoHS and halogen-free requirements if environmental standards are mandatory for the application.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The 30 V rating and 0.8 A current capacity suit portable electronics and battery-powered devices. Evaluate thermal resistance and power dissipation limits under actual operating conditions to ensure reliability within the specified junction temperature range.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. The suffix '-13' indicates packaging in reels of 10,000 units. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for modern power management architectures.
Replacement Considerations
Consult the manufacturer's documentation for qualified alternatives. Verify pinout compatibility and electrical parameters such as V_DSS, I_D, and R_DS(ON) before substitution. Ensure the replacement component meets the same package and thermal requirements.
