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Product Detailed Parameters
- Description：MOSFET N-CH 30V 5.8A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：386 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：720mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3404L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a gate-source voltage rating of ±20V. The device offers low on-state resistance, specified as 28mΩ at VGS=10V with a continuous drain current of 5.8A, or 42mΩ at VGS=4.5V with 4.8A. It utilizes a SOT-23 surface-mount package. Electrical characteristics include a gate threshold voltage range of 1.0V to 2.0V and a total gate charge of up to 16nC at VGS=10V. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features low input capacitance and fast switching speed capabilities.
- Constructed with totally lead-free materials and fully RoHS compliant construction.
- Utilizes a molded plastic case with UL flammability classification rating 94V-0.
Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard compliance level and tape & reel packaging configuration. Confirm that the application environment does not require automotive qualification (AEC-Q101), which necessitates the 'DMN3404LQ-7' variant instead. Ensure procurement channels provide original manufacturer documentation to validate component authenticity and traceability.
Selection Notes
Select this component when designing circuits requiring a 30V N-channel MOSFET in a compact SOT-23 footprint. Evaluate thermal dissipation requirements against the 0.72W limit on FR-4 substrates without thermal biasing. Consider the gate threshold voltage range for compatibility with logic-level drivers if operating below 10V gate drive voltages.
Part Context
This part belongs to the DMN3404 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on optimizing the balance between low conduction losses and rapid switching transitions. The DMN3404L-7 represents the standard commercial grade version packaged in reels of 3000 units.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q101 qualification, and PPAP capability, substitute with DMN3404LQ-7. Verify pinout compatibility and electrical parameter overlaps before replacing existing designs.
